Die Spannungs- und Stromangaben sind als Betrag aufzufassen. Vorzeichen müssen entsprechend Betriebsart und Polarität des Halbleitermaterials gesetzt werden.

Voltage and current ratings are given as magnitude, where the sign has to be set according to operating condition and polarity of the semiconductor material.

	2N2147	2N2148		Single-Ended Push-Pull Class-B AF-Amplifier
@Tc: Rate POUT: Pc: UBE: Ic: ICM: GP: RIN(B): RL: k: @Ucc: @UEE: R1: R2: R3: R4: R5: R6: Zn2: Zn3:	25 TYP 0 - 240 35 - - - 4.0 - 22 22 25 12.5 - 1100 3.5 33 75 4.0 5.0 20 20 330 3.9 330 3.9 0.47 0.47 100 100	25 TYP 0 - 260 35 - - - 4.0 - 16.5 16.5 15 7.5 - 850 2.7 31 65 4.0 5.0 15 15 270 3.9 270 3.9 0.47 0.47 100 100	°C   W W mV mA A dB OHM OHM % V V OHM OHM OHM OHM OHM OHM OHM OHM
Ref *?	Rca70		15041

		2N2147			Beschreibung der Bauteile - Parts Description
R1:		330	OHM		±10%, 2W
R2:		3.9	OHM		±10%, 0.5W
R3:		330	OHM		±10%, 2W
R4:		3.0	OHM		±10%, 0.5W
R5:		0.47	OHM		±10%, 0.5W
R6:		0.47	OHM		±10%, 0.5W
T1:		Driver Transformer			Primary-winding impedance (n1), current-carrying capacity, and DC resistance determined by large-signal characteristics of driver stage; secondary windings (n2, n3) bifilar wound.

		2N2148			Beschreibung der Bauteile - Parts Description
R1:		270	OHM		±10%, 2W
R2:		3.9	OHM		±10%, 0.5W
R3:		270	OHM		±10%, 2W
R4:		3.0	OHM		±10%, 0.5W
R5:		0.47	OHM		±10%, 0.5W
R6:		0.47	OHM		±10%, 0.5W
T1:		Driver Transformer			Primary-winding impedance (n1), current-carrying capacity, and DC resistance determined by large-signal characteristics of driver stage; secondary windings (n2, n3) bifilar wound.

	2N2147		High-Quality Power Amplifier
@Tc: Rate POUT: Uin~: Icc: RL: GPn: k: UCC2: @f: @Ucc: @UEE: Gu: @f: Gu: @f: R10: R11: R12: R13: R15: R16: Zn1:	25 TYP 0 0 0.15 4.0 - - 20 - 22 22 25 50 1.0 4.0 80 0.5 - 1.0 20 20 –1.0 0.02...20 –2.0 0.015...35 270 270 22 22 0.47 0.47 400	°C   W mV.RMS A OHM dB % V kHz V V dB kHz dB kHz OHM OHM OHM OHM OHM OHM OHM
Ref *?	Rca70	15041

		2N2147			Beschreibung der Bauteile - Parts Description
C1:		5.0	µF		3V, electrolytic
C2:		200	µF		3V, electrolytic
C3:		2.5	mF		35V, electrolytic
C4:		39	pF		Mica
C5:		10	µF		3V, electrolytic
C6:		250	µF		15V, electrolytic
C7:		39	pF		Mica
Q1:		40329			PNP Transistor
Q2:		2N3241			NPN Transistor
Q3:		40428			Temperature- and voltage-compensation diode
Q4:		40428			Temperature- and voltage-compensation diode
Q5:		2N2147			PNP Transistor
Q6:		2N2147			PNP Transistor
R1:		1.5	kOHM		0.5W
R2:		22	kOHM		0.5W
R3:		270	OHM		0.5W
R4:		1.0	kOHM		0.5W
R5:		56	kOHM		0.5W
R6:		22	kOHM		0.5W
R7:		330	OHM		1W
R8:			OHM		Selected to provide UCC2 rating across C3 under zero-signal conditions.
R9:		1.0	kOHM		0.5W
R10:		270	OHM		2W
R11:		270	OHM		2W
R12:		22	OHM		5W
R13:		22	OHM		5W
R14:		33	kOHM		0.5W
R15:		0.47	OHM		0.5W
R16:		0.47	OHM		0.5W
T1:		Driver Transformer			Turns ratio, primary to each secondary n1/n2 = n1/n3 = 3. Primary DC current-carrying capacity = 0 mA.

POUT = 1.0 ... 2.0 W
		Rate	GP	S/N	k	Uin~	RG	@Ub	POUT	RL	f	f @P			@TA	Ref *?
			dB	dB	%	mV.RMS	kOHM	V	W	OHM	kHz	kHz	dB		°C
Q610		TYP	-	81.5	10	-	2.2	9.0	1.2	8.0	1.0	0.07 ...8.0	3.0		45	Sie66 Sie72 Ci4 168
		TYP	-	-	-	4.0	2.2	9.0	0.05	8.0	1.0	-	-
		TYP	-	-	4.0	22	2.2	9.0	1.0	8.0	1.0	-	-
		TYP	-	-	6.5 4.6	-	2.2	9.0	1.0	8.0	0.1 8.0	-	-
		Rate	GP	S/N	k	Uin~	RG	@Ub	POUT	RL	f	f @P			@TA	18252
			dB	dB	%	mV.RMS	kOHM	V	W	OHM	kHz	kHz	dB		°C

Eisenlose Komplementär-Endstufe - Complementary OTL Power Amplifier
		Q610			Beschreibung der Bauteile - Parts Description
C1:		-	µF		Elektrolytkondensator - electrolytic
C2:		25	µF		Elektrolytkondensator - electrolytic
C3:		500	µF		Elektrolytkondensator - electrolytic
C4:		10	nF
C5:		250	µF		Elektrolytkondensator - electrolytic
C6:		500	µF		Elektrolytkondensator - electrolytic
Q1:		AC127			Q610 (1)
Q2:		AC152			Q610 (2)
Q3:		AC152			Q610 (3)
Q4:		AC127			Q610 (4)
R1:		10	OHM
R2:		15	kOHM
R3:		18	kOHM
R4:		2.2	kOHM
R5:		1.0	kOHM
R6:		470	OHM
R7:		1.5	kOHM
R8:		150	OHM		NTC K151.150
R9:		39	OHM
R10:		47	OHM
R11:		500	OHM

POUT = 2.0 ... 5.0 W
		Rate	GP	k	Uin~	ZIN	@UCC	POUT	RL	f	f @P		GK		@TA	Ref *?
			dB	%	V.RMS	kOHM	V	W	OHM	kHz	kHz	dB	dB		°C
2SA537  2SC708		MIN	-	-	-	15	35	5.0	16	1.0	0.02 ...60	2.0	30		-	Hit70 Ci3
		TYP	67	0.5	0.2	-
		Rate	GP	k	Uin~	ZIN	@UCC	POUT	RL	f	f @P		GK		@TA	17852
			dB	%	V.RMS	kOHM	V	W	OHM	kHz	kHz	dB	dB		°C

Complementary OTL Power Amplifier
		2SA537			Beschreibung der Bauteile - Parts Description
C1:		30	µF		12V, electrolytic
C2:		200	µF		50V, electrolytic
C3:		200	µF		6V, electrolytic
C4:		1.0	µF		25V, electrolytic
C5:		10	µF		25V, electrolytic
C6:		50	µF		15V, electrolytic
C7:		100	pF		Mica
C8:		250	pF		Mica
C9:		1.0	mF		25V, electrolytic
C10:		2.0	mF		50V, electrolytic
C11:		10	nF
Q1:		2SC458LG			Low-noise NPN transistor
Q2:		2SC984			NPN transistor
Q3:		2SC708			NPN transistor on heat sink
Q4:		HV26			Temperature- and voltage-compensation diode
Q5:		2SA537			PNP transistor on heat sink
Q6:		2SC708			NPN transistor on heat sink
R1:		22	kOHM		0.5W
R2:		57	kOHM		0.5W
R3:		2.7	kOHM		0.5W
R4:		100	OHM		0.5W
R5:		1.0	kOHM		0.5W
R6:		5.0	kOHM		0.5W
R7:		25	kOHM		1W
R8:		500	kOHM		0.5W, Symmetry adjust
R9:		300	OHM		2W
R10:		4.7	kOHM		0.5W
R11:		30	OHM		0.5W, Bias adjust
R12:		1.0	OHM		1W
R13:		1.0	OHM		1W
R14:		10	OHM		0.5W